جامعة بلاد الرافدين - Bilad Alrafidain University - Imad N. Kashkool

م.د. عماد نصيف كشكول

Imad N. Kashkool

مقرر قسم : تقنيات الاشعة والسونار

Department rapporteur : Department of Radiology Techniques

دكتوراه

PHD

bauc14.edu.iq

ekshkol@yahoo.com

News

Research

Compositions

Syllabuses

Lectures

Graduation projects

Articles in the magazine

Syllabuses

Syllabuses - 1

Dep.	Step.	Sem.	code	No.	Des.	Syllabuses
Collage of Dentistry	one	full		6		الفيزياء الطبية Medical Physics

Research

	2023	AIP
We are studying in this research, the optimization of thickness of ZnO:B thin films with respect to its usage as a contact layer for silicon solar cells with large area obtained by (LPCVD) to increase the efficiency of Si solar cell. The electrical and optical properties of ZnO:B thin film electrodes with a differences thickness (0.2,0.5,1,1.6 µm) prepared by LPCVD method are studied, where, the transmittance is significantly reduced as the film thickness increases, diffuse transmittance and HAZE factor was decreased, where the best value in 1.6 µm approach 18.2% and sheet resistance about 18Ω. The optical band gap (Eg) was gradually lowered to 3.2 eV to further increase the film thickness to 1.6 µm. The best J-V characteristics was achieved for ZnO:B electrode when thin films thickness (1.6 µm) thus, recording higher efficiency approach (7.58%) and fill factor (0. 5).

	2021	Minar
We are studying the effect of the deposition temperature on the optical properties for ZnO:B thin films on glass substrates obtained bylow pressure chemical viper deposition (LPCVD), to develop layers with characteristics that best meet the requirements for use in solar cell.According to the depositiontemperaturein the range ( 185-195 ℃), we obtainedthat ,when (T=195℃),the optimum value of the Haze factor about 25.7% ,ZnO:B thin film thickness increased, which leads to decrease the value of sheet resistance,and the transmittance decreases ,so the optimum temperature in the range (90- 95℃). Key words: Zinc Oxide, LPCVD ,Solar Cell, Haze Factor.

	2018	IOP Conference Series Materials Science and Engineering
Method for forming thin film heterostructures ZnO/CuO in a single technological cycle with vacuum circuit with use RF magnetron reactive sputtering of copper powder and zinc oxide was offered. The resulting film CuO had band gap of 1.6...1.7 eV and possessed stability up to 350°C. ZnO film had a transparency of 85% in the wavelength range of 400...1100 nm. Selection of medium temperatures for forming the heterostructure (200...250°C) allowed to reduce its series resistance, and the addition of the thin heterojunction structure of the intermediate layer i-ZnO allowed to improve nonlinearity voltage characteristics and improve the photoresponse

	2018	IOp
"Abstract. Method for forming thin film heterostructures ZnO/CuO in a single technological cycle with vacuum circuit with use RF magnetron reactive sputtering of copper powder and zinc oxide was offered. The resulting film CuO had band gap of 1.6…1.7 eV and possessed stability up to 350C. ZnO film had a transparency of 85% in the wavelength range of 400…1100 nm. Selection of medium temperatures for forming the heterostructure (200…250°C) allowed to reduce its series resistance, and the addition of the thin heterojunction structure of the intermediate layer i-ZnO allowed to improve nonlinearity voltage characteristics and improve the photoresponse "

	2018	IOP
The composition and microstructure of nanoscale metal oxide coatings deposited by magnetron RF sputtering copper on the quartz glass with followed heat treatment were investigated. The dependence of the film thickness and the content of oxides CuO and Cu2O in it depending on the temperature and time of heat treatment conditions were obtained. Studies have shown that, depending on the mode of receipt of copper oxide films may be multiphasic and include various oxide phases, predominantly, CuO and Cu2O with different bandgap and p-type conductivity.

	2017	Glass Physics and Chemistry
The composition and structure of copper oxide thin films obtained by thermal oxidation of copper layers with a thickness of 100 nm, deposited onto quartz glass by high-frequency magnetron sputtering, have been studied. The dependences of the film thickness and content of CuO and Cu2O oxides in it on the temperature–time conditions of thermal treatment are obtained. The studies have shown that depending on the preparation modes, the films can be multiphase and contain different copper oxides, predominantly, CuO and Cu2O, which possess different bandgaps and p-type conductivity.

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